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SCT10N120H

STMicroelectronics

Product No:

SCT10N120H

Manufacturer:

STMicroelectronics

Package:

H2Pak-2

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Datasheet:

Description:

SICFET N-CH 1200V 12A H2PAK-2

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	690mOhm @ 6A, 20V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	H2Pak-2
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	150W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tape & Reel (TR)
Base Product Number	SCT10