Home / Single FETs, MOSFETs / SCT3080ALGC11

SCT3080ALGC11

Rohm Semiconductor

Product No:

SCT3080ALGC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

Batch:

Datasheet:

Description:

SICFET N-CH 650V 30A TO247N

Quantity:

Delivery:

Payment:

In Stock : 1165

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$11.3715

$11.3715
10

$9.74795

$97.4795
100

$8.123165

$812.3165
500

$7.167465

$3583.7325
1000

$6.450718

$6450.718

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SCT3080ALGC11, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SCT3080ALGC11 and the required quantity in your RFQ. IICSEMI provides the latest quote for SCT3080ALGC11 without requiring registration. Latest information on SCT3080ALGC11: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SCT3080ALGC11 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	571 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	104mOhm @ 10A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 5mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	134W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT3080