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SCTH35N65G2V-7

STMicroelectronics

Product No:

SCTH35N65G2V-7

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

Batch:

Datasheet:

Description:

SICFET N-CH 650V 45A H2PAK-7

Quantity:

Delivery:

Payment:

In Stock : 838

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$15.352

$15.352
10

$13.52515

$135.2515
100

$11.69735

$1169.735
500

$10.600689

$5300.3445

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	3.2V @ 1mA
Supplier Device Package	H2PAK-7
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	208W (Tc)
Series	-
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Package	Tape & Reel (TR)
Base Product Number	SCTH35