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SCTH70N120G2V-7

STMicroelectronics

Product No:

SCTH70N120G2V-7

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

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Datasheet:

Description:

SILICON CARBIDE POWER MOSFET 120

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3540 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 50A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.9V @ 1mA
Supplier Device Package	H2PAK-7
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	469W (Tc)
Series	-
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)