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SCTL90N65G2V

STMicroelectronics

Product No:

SCTL90N65G2V

Manufacturer:

STMicroelectronics

Package:

PowerFlat™ (8x8) HV

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Datasheet:

Description:

SILICON CARBIDE POWER MOSFET 650

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	24mOhm @ 40A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	PowerFlat™ (8x8) HV
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	935W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)