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SCTW100N65G2AG

STMicroelectronics

Product No:

SCTW100N65G2AG

Manufacturer:

STMicroelectronics

Package:

HiP247™

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Datasheet:

Description:

SICFET N-CH 650V 100A HIP247

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Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3315 pF @ 520 V
Gate Charge (Qg) (Max) @ Vgs	162 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	26mOhm @ 50A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 5mA
Supplier Device Package	HiP247™
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	420W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCTW100