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SCTW40N120G2V

STMicroelectronics

Product No:

SCTW40N120G2V

Manufacturer:

STMicroelectronics

Package:

HiP247™

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Datasheet:

Description:

SILICON CARBIDE POWER MOSFET 120

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Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1233 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.9V @ 1mA
Supplier Device Package	HiP247™
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	278W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube