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SI3474DV-T1-BE3

Vishay Siliconix

Product No:

SI3474DV-T1-BE3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

Batch:

-

Datasheet:

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Description:

N-CHANNEL 100-V (D-S) MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 126mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2W (Ta), 3.6W (Tc)
Series -
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta), 3.8A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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