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SIA813DJ-T1-GE3

Vishay Siliconix

Product No:

SIA813DJ-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SC-70-6 Dual

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Description:

MOSFET P-CH 20V 4.5A PPAK SC70-6

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	355 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	94mOhm @ 2.8A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	PowerPAK® SC-70-6 Dual
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.9W (Ta), 6.5W (Tc)
Series	LITTLE FOOT®
Package / Case	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SIA813