Home / Single FETs, MOSFETs / SIE802DF-T1-GE3

SIE802DF-T1-GE3

Vishay Siliconix

Product No:

SIE802DF-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

10-PolarPAK® (L)

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 60A 10POLARPAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SIE802DF-T1-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SIE802DF-T1-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SIE802DF-T1-GE3 without requiring registration. Latest information on SIE802DF-T1-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SIE802DF-T1-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.9mOhm @ 23.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.7V @ 250µA
Supplier Device Package	10-PolarPAK® (L)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Series	TrenchFET®
Package / Case	10-PolarPAK® (L)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIE802