Home / Single FETs, MOSFETs / SPB21N10T

SPB21N10T

Infineon Technologies

Product No:

SPB21N10T

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 21A TO263-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SPB21N10T, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SPB21N10T and the required quantity in your RFQ. IICSEMI provides the latest quote for SPB21N10T without requiring registration. Latest information on SPB21N10T: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SPB21N10T latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	865 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	38.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 15A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 44µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	90W (Tc)
Series	SIPMOS®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SPB21N