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SPD06N60C3BTMA1

Infineon Technologies

Product No:

SPD06N60C3BTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

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Datasheet:

Description:

MOSFET N-CH 650V 6.2A TO252-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	750mOhm @ 3.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.9V @ 260µA
Supplier Device Package	PG-TO252-3-11
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	74W (Tc)
Series	CoolMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.2A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SPD06N