Home / Single FETs, MOSFETs / SPI11N60C3XKSA1

SPI11N60C3XKSA1

Infineon Technologies

Product No:

SPI11N60C3XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

Datasheet:

Description:

SPI11N60C3 - 600V COOLMOS N-CHAN

Quantity:

Delivery:

Payment:

In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

205

$1.3965

$286.2825

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SPI11N60C3XKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SPI11N60C3XKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for SPI11N60C3XKSA1 without requiring registration. Latest information on SPI11N60C3XKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SPI11N60C3XKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 500µA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	125W (Tc)
Series	CoolMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk