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SPU11N10

Infineon Technologies

Product No:

SPU11N10

Manufacturer:

Infineon Technologies

Package:

P-TO251-3-1

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Datasheet:

Description:

MOSFET N-CH 100V 10.5A TO251-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	18.3 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	170mOhm @ 7.8A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 21µA
Supplier Device Package	P-TO251-3-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	50W (Tc)
Series	SIPMOS®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPU11N