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SSI4N60BTU

Fairchild Semiconductor

Product No:

SSI4N60BTU

Manufacturer:

Fairchild Semiconductor

Package:

I2PAK (TO-262)

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 50126

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

634

$0.4465

$283.081

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5Ohm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	3.13W (Ta), 100W (Tc)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk