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STB5NK52ZD-1

STMicroelectronics

Product No:

STB5NK52ZD-1

Manufacturer:

STMicroelectronics

Package:

I2PAK

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Description:

MOSFET N-CH 520V 4.4A I2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	529 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	16.9 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 50µA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	520 V
Power Dissipation (Max)	70W (Tc)
Series	SuperMESH™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STB5N