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STHU32N65DM6AG

STMicroelectronics

Product No:

STHU32N65DM6AG

Manufacturer:

STMicroelectronics

Package:

HU3PAK

Batch:

-

Datasheet:

pdf.png

Description:

AUTOMOTIVE-GRADE N-CHANNEL 650 V

Quantity:

Delivery:

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Payment:

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In Stock : 77

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.037

    $8.037

  • 10

    $7.2618

    $72.618

  • 25

    $6.9236

    $173.09

  • 100

    $6.011885

    $601.1885

  • 250

    $5.741648

    $1435.412

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2211 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 52.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 97mOhm @ 18.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.75V @ 250µA
Supplier Device Package HU3PAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 320W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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