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STI11NM60ND

STMicroelectronics

Product No:

STI11NM60ND

Manufacturer:

STMicroelectronics

Package:

I2PAK

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Datasheet:

Description:

MOSFET N-CH 600V 10A I2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	450mOhm @ 5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	90W (Tc)
Series	FDmesh™ II
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STI11N