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STS9P2UH7

STMicroelectronics

Product No:

STS9P2UH7

Manufacturer:

STMicroelectronics

Package:

8-SOIC

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Datasheet:

Description:

MOSFET P-CH 20V 9A 8SO

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Product Information

Parameter Info

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2390 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	22.5mOhm @ 4.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.7W (Tc)
Series	STripFET™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	STS9P