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TPS1101DR

Texas Instruments

Product No:

TPS1101DR

Manufacturer:

Texas Instruments

Package:

8-SOIC

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Description:

MOSFET P-CH 15V 2.3A 8SOIC

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11.25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	90mOhm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	15 V
Power Dissipation (Max)	791mW (Ta)
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Mfr	Texas Instruments
Vgs (Max)	+2V, -15V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPS1101