Home / Single FETs, MOSFETs / TQM019NH04CR RLG

TQM019NH04CR RLG

Taiwan Semiconductor Corporation

Product No:

TQM019NH04CR RLG

Manufacturer:

Taiwan Semiconductor Corporation

Package:

8-PDFNU (4.9x5.75)

Batch:

Datasheet:

Description:

40V, 100A, SINGLE N-CHANNEL POWE

Quantity:

Delivery:

Payment:

In Stock : 4980

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$6.213

$6.213
10

$5.21645

$52.1645
100

$4.220375

$422.0375
500

$3.751417

$1875.7085
1000

$3.21215

$3212.15
2000

$3.024582

$6049.164

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9044 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	134 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	1.9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.6V @ 250µA
Supplier Device Package	8-PDFNU (4.9x5.75)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	150W (Tc)
Series	Automotive, AEC-Q101, PerFET™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 100A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)