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TQM019NH04CR-V RLG

Taiwan Semiconductor Corporation

Product No:

TQM019NH04CR-V RLG

Package:

8-PDFNU (4.9x5.75)

Batch:

-

Datasheet:

-

Description:

40V, 100A, SINGLE N-CHANNEL POWE

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 9044 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
Mounting Type Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.6V @ 250µA
Supplier Device Package 8-PDFNU (4.9x5.75)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 150W (Tc)
Series Automotive, AEC-Q101, PerFET™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Package Tape & Reel (TR)

TQM019NH04CR-V RLG Tags

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