Home / Diode Arrays / TRS12N65FB,S1Q

TRS12N65FB,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS12N65FB,S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-247

Batch:

Datasheet:

Description:

SIC SBD TO-247 V=650 IF=12A

Quantity:

Delivery:

Payment:

In Stock : 55

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.617

$4.617
10

$3.87885

$38.7885
100

$3.138135

$313.8135
500

$2.789466

$1394.733
1000

$2.388471

$2388.471
2000

$2.249002

$4498.004

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TRS12N65FB,S1Q, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TRS12N65FB,S1Q and the required quantity in your RFQ. IICSEMI provides the latest quote for TRS12N65FB,S1Q without requiring registration. Latest information on TRS12N65FB,S1Q: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TRS12N65FB,S1Q latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-247
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Series	-
Package / Case	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Diode Configuration	1 Pair Common Cathode
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io) (per Diode)	6A (DC)
Operating Temperature - Junction	175°C
Base Product Number	TRS12N65