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TRS6E65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS6E65F,S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220-2L

Batch:

Datasheet:

Description:

DIODE SIL CARB 650V 6A TO220-2L

Quantity:

Delivery:

Payment:

In Stock : 1

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.565

$2.565
10

$2.1565

$21.565
100

$1.74439

$174.439
500

$1.550552

$775.276
1000

$1.327663

$1327.663
2000

$1.250134

$2500.268
5000

$1.199375

$5996.875

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Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	22pF @ 650V, 1MHz
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220-2L
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	6A
Operating Temperature - Junction	175°C (Max)
Base Product Number	TRS6E65