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TRS8A65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS8A65F,S1Q

Package:

TO-220F-2L

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARBIDE 650V 8A TO220F

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 41

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.4105

    $3.4105

  • 10

    $2.86045

    $28.6045

  • 100

    $2.314295

    $231.4295

  • 500

    $2.057168

    $1028.584

  • 1000

    $1.761452

    $1761.452

  • 2000

    $1.658596

    $3317.192

  • 5000

    $1.59125

    $7956.25

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 28pF @ 650V, 1MHz
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-220F-2L
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Series -
Package / Case TO-220-2 Full Pack
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 8 A
Mfr Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tube
Current - Average Rectified (Io) 8A
Operating Temperature - Junction 175°C (Max)
Base Product Number TRS8A65

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