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TSM043NB04LCZ

Taiwan Semiconductor Corporation

Product No:

TSM043NB04LCZ

Package:

TO-220

Batch:

-

Datasheet:

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Description:

40V, 124A, SINGLE N-CHANNEL POWE

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4387 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.3mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 2W (Ta), 125W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 124A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number TSM043

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