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TSM061NA03CV RGG

Taiwan Semiconductor Corporation

Product No:

TSM061NA03CV RGG

Manufacturer:

Taiwan Semiconductor Corporation

Package:

8-PDFN (3.1x3.1)

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Datasheet:

Description:

MOSFET N-CH 30V 66A 8PDFN

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1136 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	19.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.1mOhm @ 16A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	44.6W (Tc)
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM061