Home / Single FETs, MOSFETs / TSM085P03CV RGG

TSM085P03CV RGG

Taiwan Semiconductor Corporation

Product No:

TSM085P03CV RGG

Manufacturer:

Taiwan Semiconductor Corporation

Package:

8-PDFN (3.1x3.1)

Batch:

Datasheet:

Description:

MOSFET P-CH 30V 64A 8PDFN

Quantity:

Delivery:

Payment:

In Stock : 80930

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.843

$1.843
10

$1.52855

$15.2855
100

$1.21695

$121.695
500

$1.029705

$514.8525
1000

$0.873686

$873.686
2000

$0.829996

$1659.992

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of TSM085P03CV RGG, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include TSM085P03CV RGG and the required quantity in the RFQ. GOOD can get the latest quotations of TSM085P03CV RGG without registration. TSM085P03CV RGG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3234 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.5mOhm @ 14A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	50W (Tc)
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM085