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TSM089N08LCR

Taiwan Semiconductor Corporation

Product No:

TSM089N08LCR

Manufacturer:

Taiwan Semiconductor Corporation

Package:

8-PDFN (5x6)

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Datasheet:

Description:

80V, 67A, SINGLE N-CHANNEL POWER

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6119 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.9mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (5x6)
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	2.6W (Ta), 83W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 67A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM089