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TSM089N08LCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM089N08LCR RLG

Package:

8-PDFN (5x6)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 80V 67A 8PDFN

Quantity:

Delivery:

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Payment:

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In Stock : 10000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.0375

    $4.0375

  • 10

    $3.3934

    $33.934

  • 100

    $2.745405

    $274.5405

  • 500

    $2.44036

    $1220.18

  • 1000

    $2.089554

    $2089.554

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6119 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.9mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-PDFN (5x6)
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 83W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM089

TSM089N08LCR RLG Tags

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