Home / FET, MOSFET Arrays / TSM110NB04DCR RLG

TSM110NB04DCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM110NB04DCR RLG

Manufacturer:

Taiwan Semiconductor Corporation

Package:

8-PDFN (5x6)

Batch:

Datasheet:

Description:

DUAL N-CHANNEL POWER MOSFET 40V,

Quantity:

Delivery:

Payment:

In Stock : 15002

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.375

$2.375
10

$1.97315

$19.7315
100

$1.57016

$157.016
500

$1.328594

$664.297
1000

$1.127298

$1127.298

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of TSM110NB04DCR RLG, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include TSM110NB04DCR RLG and the required quantity in the RFQ. GOOD can get the latest quotations of TSM110NB04DCR RLG without registration. TSM110NB04DCR RLG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 155°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1506pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	8-PDFN (5x6)
Drain to Source Voltage (Vdss)	40V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta), 48W (Tc)
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 48A (Tc)
Mfr	Taiwan Semiconductor Corporation
Package	Tape & Reel (TR)
Base Product Number	TSM110