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TSM130NB06LCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM130NB06LCR RLG

Package:

8-PDFN (5.2x5.75)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 60V 10A/51A 8PDFN

Quantity:

Delivery:

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Payment:

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In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.843

    $1.843

  • 10

    $1.53235

    $15.3235

  • 100

    $1.219895

    $121.9895

  • 500

    $1.032232

    $516.116

  • 1000

    $0.875834

    $875.834

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2175 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-PDFN (5.2x5.75)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.1W (Ta), 83W (Tc)
Series -
Package / Case 8-PowerLDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 51A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM130

TSM130NB06LCR RLG Tags

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