Home / Single FETs, MOSFETs / TSM1NB60CW RPG

TSM1NB60CW RPG

Taiwan Semiconductor Corporation

Product No:

TSM1NB60CW RPG

Manufacturer:

Taiwan Semiconductor Corporation

Package:

SOT-223

Batch:

Datasheet:

Description:

MOSFET N-CHANNEL 600V 1A SOT223

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.3965

$1.3965
10

$1.14

$11.4
100

$0.88654

$88.654
500

$0.751488

$375.744
1000

$0.612161

$612.161

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of TSM1NB60CW RPG, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include TSM1NB60CW RPG and the required quantity in the RFQ. GOOD can get the latest quotations of TSM1NB60CW RPG without registration. TSM1NB60CW RPG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	138 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	39W (Tc)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TSM1NB60