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TSM1NB60SCT B0

Taiwan Semiconductor Corporation

Product No:

TSM1NB60SCT B0

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-92

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Datasheet:

Description:

MOSFET N-CH 600V 500MA TO92

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	138 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	10Ohm @ 250mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-92
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	2.5W (Tc)
Series	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	500mA (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk