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TSM2NB60CH

Taiwan Semiconductor Corporation

Product No:

TSM2NB60CH

Package:

TO-251 (IPAK)

Batch:

-

Datasheet:

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Description:

600V, 2A, SINGLE N-CHANNEL POWER

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 249 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.4Ohm @ 1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-251 (IPAK)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 44W (Tc)
Series -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM2

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