Home / Single FETs, MOSFETs / TSM2NB65CH X0G

TSM2NB65CH X0G

Taiwan Semiconductor Corporation

Product No:

TSM2NB65CH X0G

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-251 (IPAK)

Batch:

Datasheet:

Description:

MOSFET N-CHANNEL 650V 2A TO251

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TSM2NB65CH X0G, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TSM2NB65CH X0G and the required quantity in your RFQ. IICSEMI provides the latest quote for TSM2NB65CH X0G without requiring registration. Latest information on TSM2NB65CH X0G: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TSM2NB65CH X0G latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-251 (IPAK)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	65W (Tc)
Series	-
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube