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TSM4NB60CH

Taiwan Semiconductor Corporation

Product No:

TSM4NB60CH

Manufacturer:

Taiwan Semiconductor Corporation

Package:

TO-251S (I-PAK SL)

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Datasheet:

Description:

600V, 4A, SINGLE N-CHANNEL POWER

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5Ohm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-251S (I-PAK SL)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	50W (Tc)
Series	-
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM4