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TSM4NB60CH C5G

Taiwan Semiconductor Corporation

Product No:

TSM4NB60CH C5G

Package:

TO-251 (IPAK)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 600V 4A TO251

Quantity:

Delivery:

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In Stock : 14992

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.0425

    $2.0425

  • 10

    $1.6929

    $16.929

  • 100

    $1.3471

    $134.71

  • 500

    $1.139886

    $569.943

  • 1000

    $0.967176

    $967.176

  • 2000

    $0.918821

    $1837.642

  • 5000

    $0.884279

    $4421.395

  • 10000

    $0.855

    $8550

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-251 (IPAK)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 50W (Tc)
Series -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM4NB60

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