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TSM4ND65CI

Taiwan Semiconductor Corporation

Product No:

TSM4ND65CI

Manufacturer:

Taiwan Semiconductor Corporation

Package:

ITO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 4A ITO220

Quantity:

Delivery:

Payment:

In Stock : 1847

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.451

$2.451
10

$2.033

$20.33
100

$1.61804

$161.804
500

$1.369121

$684.5605
1000

$1.161688

$1161.688
2000

$1.103606

$2207.212
5000

$1.06211

$5310.55

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	596 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	16.8 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.6Ohm @ 1.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 250µA
Supplier Device Package	ITO-220
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	41.6W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM4