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TSM60NB900CP ROG

Taiwan Semiconductor Corporation

Product No:

TSM60NB900CP ROG

Package:

TO-252, (D-Pak)

Batch:

-

Datasheet:

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Description:

MOSFET N-CHANNEL 600V 4A TO252

Quantity:

Delivery:

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Payment:

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In Stock : 2480

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.6505

    $2.6505

  • 10

    $2.19925

    $21.9925

  • 100

    $1.750565

    $175.0565

  • 500

    $1.481221

    $740.6105

  • 1000

    $1.256793

    $1256.793

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 900mOhm @ 1.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-252, (D-Pak)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 36.8W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TSM60

TSM60NB900CP ROG Tags

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