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TSM70N900CI

Taiwan Semiconductor Corporation

Product No:

TSM70N900CI

Package:

ITO-220

Batch:

-

Datasheet:

pdf.png

Description:

700V, 4.5A, SINGLE N-CHANNEL POW

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 482 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 900mOhm @ 1.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package ITO-220
Drain to Source Voltage (Vdss) 700 V
Power Dissipation (Max) 20W (Tc)
Series -
Package / Case TO-220-3 Full Pack, Isolated Tab
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Mfr Taiwan Semiconductor Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM70

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