Home / Single FETs, MOSFETs / UPA2680T1E-E2-AT

UPA2680T1E-E2-AT

Renesas Electronics America Inc

Product No:

UPA2680T1E-E2-AT

Manufacturer:

Renesas Electronics America Inc

Package:

6-MLP (3x3)

Batch:

Datasheet:

Description:

MOSFET N-CH 20V 3A 6MLP

Quantity:

Delivery:

Payment:

In Stock : 567000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

508

$0.5605

$284.734

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for UPA2680T1E-E2-AT, please feel free to contact us. To facilitate the processing of your inquiry, kindly include UPA2680T1E-E2-AT and the required quantity in your RFQ. IICSEMI provides the latest quote for UPA2680T1E-E2-AT without requiring registration. Latest information on UPA2680T1E-E2-AT: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs UPA2680T1E-E2-AT latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 3A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	6-MLP (3x3)
Drain to Source Voltage (Vdss)	20 V
Series	-
Package / Case	6-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	Renesas Electronics America Inc
Package	Bulk