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10ETF10S

Vishay General Semiconductor - Diodes Division

Product No:

10ETF10S

Package:

TO-263AB (D²PAK)

Batch:

-

Datasheet:

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Description:

DIODE GEN PURP 1KV 10A TO263AB

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 310 ns
Capacitance @ Vr, F -
Mounting Type Surface Mount
Product Status Obsolete
Supplier Device Package TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr 100 µA @ 1000 V
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.33 V @ 10 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 1000 V
Package Tube
Current - Average Rectified (Io) 10A
Operating Temperature - Junction -40°C ~ 150°C
Base Product Number 10ETF10

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