Home / Single Diodes / 10ETF12S

10ETF12S

Vishay General Semiconductor - Diodes Division

Product No:

10ETF12S

Manufacturer:

Vishay General Semiconductor - Diodes Division

Package:

TO-263AB (D²PAK)

Batch:

Datasheet:

Description:

DIODE GEN PURP 1.2KV 10A TO263AB

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for 10ETF12S, please feel free to contact us. To facilitate the processing of your inquiry, kindly include 10ETF12S and the required quantity in your RFQ. IICSEMI provides the latest quote for 10ETF12S without requiring registration. Latest information on 10ETF12S: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs 10ETF12S latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	310 ns
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.33 V @ 10 A
Mfr	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Tube
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	-40°C ~ 150°C
Base Product Number	10ETF12