Home / Single Diodes / 1N8031-GA

1N8031-GA

GeneSiC Semiconductor

Product No:

1N8031-GA

Manufacturer:

GeneSiC Semiconductor

Package:

TO-276

Batch:

Datasheet:

Description:

DIODE SIL CARBIDE 650V 1A TO276

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for 1N8031-GA, please feel free to contact us. To facilitate the processing of your inquiry, kindly include 1N8031-GA and the required quantity in your RFQ. IICSEMI provides the latest quote for 1N8031-GA without requiring registration. Latest information on 1N8031-GA: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs 1N8031-GA latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	76pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	TO-276
Current - Reverse Leakage @ Vr	5 µA @ 650 V
Series	-
Package / Case	TO-276AA
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 1 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C ~ 250°C
Base Product Number	1N8031