Home / Single FETs, MOSFETs / 2N7000,126

2N7000,126

NXP USA Inc.

Product No:

2N7000,126

Manufacturer:

NXP USA Inc.

Package:

TO-92-3

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Datasheet:

Description:

MOSFET N-CH 60V 300MA TO92-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	TO-92-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	830mW (Ta)
Series	TrenchMOS™
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Box (TB)
Base Product Number	2N70