Home / Single Bipolar Transistors / 2SD2406-Y(F)

2SD2406-Y(F)

Toshiba Semiconductor and Storage

Product No:

2SD2406-Y(F)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220NIS

Batch:

Datasheet:

Description:

TRANS NPN 80V 4A TO220NIS

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
Frequency - Transition	8MHz
Current - Collector (Ic) (Max)	4 A
Vce Saturation (Max) @ Ib, Ic	1.5V @ 300mA, 3A
Mounting Type	Through Hole
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	80 V
Supplier Device Package	TO-220NIS
Series	-
Transistor Type	NPN
Package / Case	TO-220-3 Full Pack
Power - Max	25 W
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	30µA (ICBO)
Package	Tube
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 5V
Base Product Number	2SD2406