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2SK3566(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

2SK3566(STA4,Q,M)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

MOSFET N-CH 900V 2.5A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 313

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.5295

$1.5295
10

$1.3642

$13.642
100

$1.063715

$106.3715
500

$0.878712

$439.356
1000

$0.693718

$693.718
2000

$0.647472

$1294.944
5000

$0.615096

$3075.48
10000

$0.591974

$5919.74

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.4Ohm @ 1.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	40W (Tc)
Series	π-MOSIV
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	2SK3566