2SK536-TB-E
Sanyo
Product No:
2SK536-TB-E
Manufacturer:
Package:
3-CP
Batch:
-
Datasheet:
-
Description:
N-CHANNEL ENHANCEMENT MOS SILICO
Quantity:
Delivery:
Payment:
In Stock : 3000
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1411
$0.1995
$281.4945
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Product Information
Parameter Info
User Guide
| Operating Temperature | 125°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 10mA, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-CP |
| Drain to Source Voltage (Vdss) | 50 V |
| Power Dissipation (Max) | 200mW (Ta) |
| Series | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Mfr | Sanyo |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
2SK536-TB-E Tags
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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