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APT34N80B2C3G

Microchip Technology

Product No:

APT34N80B2C3G

Manufacturer:

Microchip Technology

Package:

T-MAX™ [B2]

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Datasheet:

Description:

MOSFET N-CH 800V 34A T-MAX

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	355 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	145mOhm @ 22A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 2mA
Supplier Device Package	T-MAX™ [B2]
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	417W (Tc)
Series	-
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Mfr	Microchip Technology
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	APT34N80